Specifications

• Series
  -
• Package
  Strip
• Part Status
  Obsolete
• Transistor Type
  NPN
• Voltage - Collector Emitter Breakdown (Max)
  10V
• Frequency - Transition
  10GHz
• Noise Figure (dB Typ @ f)
  1.8dB @ 2GHz
• Gain
  12dB
• Power - Max
  200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce
  50 @ 10mA, 6V
• Current - Collector (Ic) (Max)
  35mA
• Operating Temperature
  150°C (TJ)
• Mounting Type
  Surface Mount
• Package / Case
  TO-253-4, TO-253AA
• Supplier Device Package
  -