NE85639R-T1

NE85639R-T1

Manufacturer

CEL (California Eastern Laboratories)

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS NPN 12V 9GHZ SOT143R

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    12V
  • Frequency - Transition
    9GHz
  • Noise Figure (dB Typ @ f)
    1.5dB ~ 2.1dB @ 1GHz
  • Gain
    13.5dB
  • Power - Max
    200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 20mA, 10V
  • Current - Collector (Ic) (Max)
    100mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-143R
  • Supplier Device Package
    SOT-143R

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Datasheet