NESG2030M04-A

NESG2030M04-A

Manufacturer

CEL (California Eastern Laboratories)

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS NPN 2.3V 60GHZ M04

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    2.3V
  • Frequency - Transition
    60GHz
  • Noise Figure (dB Typ @ f)
    0.9dB ~ 1.1dB @ 2GHz
  • Gain
    16dB
  • Power - Max
    80mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    200 @ 5mA, 2V
  • Current - Collector (Ic) (Max)
    35mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-343F
  • Supplier Device Package
    M04

NESG2030M04-A Request a Quote

In Stock 3866
Quantity:
Target price:
Total:0

Datasheet