NESG2101M05-A

NESG2101M05-A

Manufacturer

CEL (California Eastern Laboratories)

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS NPN 5V 17GHZ M05

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Discontinued at Digi-Key
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    5V
  • Frequency - Transition
    17GHz
  • Noise Figure (dB Typ @ f)
    0.6dB ~ 1.2dB @ 1GHz ~ 2GHz
  • Gain
    11dB ~ 19dB
  • Power - Max
    500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    130 @ 15mA, 2V
  • Current - Collector (Ic) (Max)
    100mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-343F
  • Supplier Device Package
    M05

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Datasheet