UPA814T-T1

UPA814T-T1

Manufacturer

CEL (California Eastern Laboratories)

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS 2 NPN 6V 9GHZ 6SO

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)
  • Part Status
    Obsolete
  • Transistor Type
    2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max)
    6V
  • Frequency - Transition
    9GHz
  • Noise Figure (dB Typ @ f)
    1.5dB @ 2GHz
  • Gain
    -
  • Power - Max
    200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 3mA, 1V
  • Current - Collector (Ic) (Max)
    100mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Supplier Device Package
    6-SO

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Datasheet