Specifications

• Series
  -
• Package
  Cut Tape (CT)Tape & Box (TB)
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  100 V
• Current - Continuous Drain (Id) @ 25°C
  320mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  10V
• Rds On (Max) @ Id, Vgs
  4Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id
  2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs
  -
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  75 pF @ 25 V
• FET Feature
  -
• Power Dissipation (Max)
  700mW (Ta)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  E-Line (TO-92 compatible)
• Package / Case
  E-Line-3