EPC2100

EPC2100

Manufacturer

EPC

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

GAN TRANS ASYMMETRICAL HALF BRID

Specifications

  • Series
    eGaN®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Half Bridge)
  • FET Feature
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    30V
  • Current - Continuous Drain (Id) @ 25°C
    10A (Ta), 40A (Ta)
  • Rds On (Max) @ Id, Vgs
    8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 4mA, 2.5V @ 16mA
  • Gate Charge (Qg) (Max) @ Vgs
    4.9nC @ 15V, 19nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds
    475pF @ 15V, 1960pF @ 15V
  • Power - Max
    -
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    Die
  • Supplier Device Package
    Die

EPC2100 Request a Quote

In Stock 8108
Quantity:
Unit Price (Reference Price):
6.94000
Target price:
Total:6.94000

Datasheet