EPC2107

EPC2107

Manufacturer

EPC

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

GANFET 3 N-CH 100V 9BGA

Specifications

  • Series
    eGaN®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    3 N-Channel (Half Bridge + Synchronous Bootstrap)
  • FET Feature
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    100V
  • Current - Continuous Drain (Id) @ 25°C
    1.7A, 500mA
  • Rds On (Max) @ Id, Vgs
    320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
  • Vgs(th) (Max) @ Id
    2.5V @ 100µA, 2.5V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs
    0.16nC @ 5V, 0.044nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds
    16pF @ 50V, 7pF @ 50V
  • Power - Max
    -
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    9-VFBGA
  • Supplier Device Package
    9-BGA (1.35x1.35)

EPC2107 Request a Quote

In Stock 15727
Quantity:
Unit Price (Reference Price):
2.01000
Target price:
Total:2.01000

Datasheet