MURTA20060

MURTA20060

Manufacturer

GeneSiC Semiconductor

Product Category

Diodes - Rectifiers - Arrays

Description

DIODE GEN PURP 600V 100A 3 TOWER

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Diode Configuration
    1 Pair Common Cathode
  • Diode Type
    Standard
  • Voltage - DC Reverse (Vr) (Max)
    600 V
  • Current - Average Rectified (Io) (per Diode)
    100A
  • Voltage - Forward (Vf) (Max) @ If
    1.7 V @ 100 A
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr)
    -
  • Current - Reverse Leakage @ Vr
    25 µA @ 600 V
  • Operating Temperature - Junction
    -55°C ~ 150°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Three Tower
  • Supplier Device Package
    Three Tower

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In Stock 1415
Quantity:
Unit Price (Reference Price):
106.56056
Target price:
Total:106.56056

Datasheet