Specifications

• Series
  HEXFET®
• Package
  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  150 V
• Current - Continuous Drain (Id) @ 25°C
  4.4A (Ta), 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  10V
• Rds On (Max) @ Id, Vgs
  56mOhm @ 11A, 10V
• Vgs(th) (Max) @ Id
  5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs
  32 nC @ 10 V
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  1360 pF @ 25 V
• FET Feature
  -
• Power Dissipation (Max)
  2.7W (Ta), 45W (Tc)
• Operating Temperature
  -55°C ~ 175°C (TJ)
• Mounting Type
  Surface Mount
• Supplier Device Package
  DIRECTFET™ M2
• Package / Case
  DirectFET™ Isometric M2