BCR198WH6327XTSA1

BCR198WH6327XTSA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - Bipolar (BJT) - Single, Pre-Biased

Description

TRANS PREBIAS PNP 250MW SOT323-3

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)
  • Part Status
    Not For New Designs
  • Transistor Type
    PNP - Pre-Biased
  • Current - Collector (Ic) (Max)
    100 mA
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Resistor - Base (R1)
    47 kOhms
  • Resistor - Emitter Base (R2)
    47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Frequency - Transition
    190 MHz
  • Power - Max
    250 mW
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Supplier Device Package
    PG-SOT323-3

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In Stock 309816
Quantity:
Unit Price (Reference Price):
0.03238
Target price:
Total:0.03238

Datasheet