BSC019N02KSGAUMA1

BSC019N02KSGAUMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 20V 30A/100A TDSON

Specifications

  • Series
    OptiMOS™
  • Package
    Tape & Reel (TR)
  • Part Status
    Not For New Designs
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    20 V
  • Current - Continuous Drain (Id) @ 25°C
    30A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs
    1.95mOhm @ 50A, 4.5V
  • Vgs(th) (Max) @ Id
    1.2V @ 350µA
  • Gate Charge (Qg) (Max) @ Vgs
    85 nC @ 4.5 V
  • Vgs (Max)
    ±12V
  • Input Capacitance (Ciss) (Max) @ Vds
    13000 pF @ 10 V
  • FET Feature
    -
  • Power Dissipation (Max)
    2.8W (Ta), 104W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-TDSON-8-1
  • Package / Case
    8-PowerTDFN

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In Stock 17299
Quantity:
Unit Price (Reference Price):
1.21958
Target price:
Total:1.21958

Datasheet