BSG0813NDIATMA1

BSG0813NDIATMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 25V 19A/33A TISON8

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual) Asymmetrical
  • FET Feature
    Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss)
    25V
  • Current - Continuous Drain (Id) @ 25°C
    19A, 33A
  • Rds On (Max) @ Id, Vgs
    3mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    8.4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    1100pF @ 12V
  • Power - Max
    2.5W
  • Operating Temperature
    -55°C ~ 155°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Supplier Device Package
    PG-TISON-8

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In Stock 17012
Quantity:
Unit Price (Reference Price):
1.24740
Target price:
Total:1.24740

Datasheet