BSZ120P03NS3GATMA1

BSZ120P03NS3GATMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET P-CH 30V 11A/40A 8TSDSON

Specifications

  • Series
    OptiMOS™
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    P-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    30 V
  • Current - Continuous Drain (Id) @ 25°C
    11A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Rds On (Max) @ Id, Vgs
    12mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id
    3.1V @ 73µA
  • Gate Charge (Qg) (Max) @ Vgs
    45 nC @ 10 V
  • Vgs (Max)
    ±25V
  • Input Capacitance (Ciss) (Max) @ Vds
    3360 pF @ 15 V
  • FET Feature
    -
  • Power Dissipation (Max)
    2.1W (Ta), 52W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-TSDSON-8
  • Package / Case
    8-PowerTDFN

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In Stock 25291
Quantity:
Unit Price (Reference Price):
0.82000
Target price:
Total:0.82000

Datasheet