DD1200S12H4HOSA1

DD1200S12H4HOSA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - IGBTs - Modules

Description

IGBT MODULE 1200V 1200A

Specifications

  • Series
    -
  • Package
    Tray
  • Part Status
    Active
  • IGBT Type
    -
  • Configuration
    2 Independent
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    1200 A
  • Power - Max
    1200000 W
  • Vce(on) (Max) @ Vge, Ic
    2.35V @ 15V, 1200A
  • Current - Collector Cutoff (Max)
    -
  • Input Capacitance (Cies) @ Vce
    -
  • Input
    Standard
  • NTC Thermistor
    No
  • Operating Temperature
    -40°C ~ 150°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module

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In Stock 934
Quantity:
Unit Price (Reference Price):
811.79500
Target price:
Total:811.79500

Datasheet