DF200R12W1H3B27BOMA1

DF200R12W1H3B27BOMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - IGBTs - Modules

Description

IGBT MOD 1200V 30A 375W

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    -
  • Configuration
    2 Independent
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    30 A
  • Power - Max
    375 W
  • Vce(on) (Max) @ Vge, Ic
    1.3V @ 15V, 30A
  • Current - Collector Cutoff (Max)
    1 mA
  • Input Capacitance (Cies) @ Vce
    2 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    Yes
  • Operating Temperature
    -40°C ~ 150°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module

DF200R12W1H3B27BOMA1 Request a Quote

In Stock 1775
Quantity:
Unit Price (Reference Price):
54.61750
Target price:
Total:54.61750

Datasheet