Specifications

• Series
  CoolSiC™+
• Package
  Tray
• Part Status
  Active
• FET Type
  2 N-Channel (Dual)
• FET Feature
  Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss)
  1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C
  100A
• Rds On (Max) @ Id, Vgs
  11mOhm @ 100A, 15V
• Vgs(th) (Max) @ Id
  5.55V @ 40mA
• Gate Charge (Qg) (Max) @ Vgs
  250nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds
  7950pF @ 800V
• Power - Max
  -
• Operating Temperature
  -40°C ~ 150°C (TJ)
• Mounting Type
  Chassis Mount
• Package / Case
  Module
• Supplier Device Package
  Module