FF200R12KE3B2HOSA1

FF200R12KE3B2HOSA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - IGBTs - Modules

Description

IGBT MOD 1200V 295A 1050W

Specifications

  • Series
    -
  • Package
    Tray
  • Part Status
    Active
  • IGBT Type
    -
  • Configuration
    Half Bridge
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    295 A
  • Power - Max
    1050 W
  • Vce(on) (Max) @ Vge, Ic
    2.15V @ 15V, 200A
  • Current - Collector Cutoff (Max)
    5 mA
  • Input Capacitance (Cies) @ Vce
    14 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    No
  • Operating Temperature
    -40°C ~ 125°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module

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In Stock 1182
Quantity:
Unit Price (Reference Price):
136.81500
Target price:
Total:136.81500