FP50R07N2E4BOSA1

FP50R07N2E4BOSA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - IGBTs - Modules

Description

IGBT MODULE 650V 70A

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Configuration
    Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    70 A
  • Power - Max
    -
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 50A
  • Current - Collector Cutoff (Max)
    1 mA
  • Input Capacitance (Cies) @ Vce
    3.1 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    Yes
  • Operating Temperature
    -40°C ~ 150°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module

FP50R07N2E4BOSA1 Request a Quote

In Stock 1435
Quantity:
Unit Price (Reference Price):
85.24200
Target price:
Total:85.24200

Datasheet