FS50R07N2E4BOSA1

FS50R07N2E4BOSA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - IGBTs - Modules

Description

IGBT MODULE 650V 70A 190W

Specifications

  • Series
    -
  • Package
    Tray
  • Part Status
    Obsolete
  • IGBT Type
    -
  • Configuration
    Full Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    70 A
  • Power - Max
    190 W
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 50A
  • Current - Collector Cutoff (Max)
    1 mA
  • Input Capacitance (Cies) @ Vce
    3.1 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    Yes
  • Operating Temperature
    -40°C ~ 125°C
  • Mounting Type
    Chassis Mount
  • Package / Case
    Module
  • Supplier Device Package
    Module

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Datasheet