IMBF170R650M1XTMA1

IMBF170R650M1XTMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

SICFET N-CH 1700V 7.4A TO263-7

Specifications

  • Series
    CoolSiC™
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    1700 V
  • Current - Continuous Drain (Id) @ 25°C
    7.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    12V, 15V
  • Rds On (Max) @ Id, Vgs
    650mOhm @ 1.5A, 15V
  • Vgs(th) (Max) @ Id
    5.7V @ 1.7mA
  • Gate Charge (Qg) (Max) @ Vgs
    8 nC @ 12 V
  • Vgs (Max)
    +20V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds
    422 pF @ 1000 V
  • FET Feature
    -
  • Power Dissipation (Max)
    88W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    -
  • Supplier Device Package
    PG-TO263-7
  • Package / Case
    TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock 7831
Quantity:
Unit Price (Reference Price):
7.28000
Target price:
Total:7.28000