IMBG120R350M1HXTMA1

IMBG120R350M1HXTMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

TRANS SJT N-CH 1.2KV 4.7A TO263

Specifications

  • Series
    CoolSiC™
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    SiC (Silicon Carbide Junction Transistor)
  • Drain to Source Voltage (Vdss)
    1.2 kV
  • Current - Continuous Drain (Id) @ 25°C
    4.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    -
  • Rds On (Max) @ Id, Vgs
    468mOhm @ 2A, 18V
  • Vgs(th) (Max) @ Id
    5.7V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    5.9 nC @ 18 V
  • Vgs (Max)
    +18V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds
    196 pF @ 800 V
  • FET Feature
    Standard
  • Power Dissipation (Max)
    65W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-TO263-7-12
  • Package / Case
    TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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In Stock 6888
Quantity:
Unit Price (Reference Price):
8.22000
Target price:
Total:8.22000