IPB22N03S4L15ATMA1

IPB22N03S4L15ATMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 30V 22A TO263-3

Specifications

  • Series
    OptiMOS™
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    30 V
  • Current - Continuous Drain (Id) @ 25°C
    22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    14.6mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs
    14 nC @ 10 V
  • Vgs (Max)
    ±16V
  • Input Capacitance (Ciss) (Max) @ Vds
    980 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    31W (Tc)
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-TO263-3-2
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock 20196
Quantity:
Unit Price (Reference Price):
1.03635
Target price:
Total:1.03635

Datasheet