IPB60R055CFD7ATMA1

IPB60R055CFD7ATMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 650V 38A TO263-3-2

Specifications

  • Series
    CoolMOS™ CFD7
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    55mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 900µA
  • Gate Charge (Qg) (Max) @ Vgs
    79 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    3194 pF @ 400 V
  • FET Feature
    -
  • Power Dissipation (Max)
    178W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-TO263-3-2
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock 8066
Quantity:
Unit Price (Reference Price):
7.04000
Target price:
Total:7.04000