IPB60R160P6ATMA1

IPB60R160P6ATMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 600V 23.8A D2PAK

Specifications

  • Series
    CoolMOS™ P6
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    23.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    160mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 750µA
  • Gate Charge (Qg) (Max) @ Vgs
    44 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    2080 pF @ 100 V
  • FET Feature
    -
  • Power Dissipation (Max)
    176W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    D²PAK (TO-263AB)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB60R160P6ATMA1 Request a Quote

In Stock 11325
Quantity:
Unit Price (Reference Price):
1.91852
Target price:
Total:1.91852

Datasheet