IPB65R310CFDATMA2

IPB65R310CFDATMA2

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 650V 11.4A TO263-3

Specifications

  • Series
    CoolMOS™ CFD2
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    11.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    310mOhm @ 4.4A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs
    41 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1100 pF @ 100 V
  • FET Feature
    -
  • Power Dissipation (Max)
    104.2W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-TO263-3
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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In Stock 15798
Quantity:
Unit Price (Reference Price):
1.33805
Target price:
Total:1.33805