IPD50R1K4CEAUMA1

IPD50R1K4CEAUMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 500V 3.1A TO252-3

Specifications

  • Series
    CoolMOS™ CE
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    500 V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    13V
  • Rds On (Max) @ Id, Vgs
    1.4Ohm @ 900mA, 13V
  • Vgs(th) (Max) @ Id
    3.5V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs
    8.2 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    178 pF @ 100 V
  • FET Feature
    -
  • Power Dissipation (Max)
    42W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-TO252-3
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock 38030
Quantity:
Unit Price (Reference Price):
0.54000
Target price:
Total:0.54000

Datasheet