IPG20N06S2L50ATMA1

IPG20N06S2L50ATMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 55V 20A 8TDSON

Specifications

  • Series
    OptiMOS™
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    55V
  • Current - Continuous Drain (Id) @ 25°C
    20A
  • Rds On (Max) @ Id, Vgs
    50mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 19µA
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    560pF @ 25V
  • Power - Max
    51W
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Supplier Device Package
    PG-TDSON-8-4

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In Stock 40514
Quantity:
Unit Price (Reference Price):
0.50382
Target price:
Total:0.50382

Datasheet