IPG20N06S4L11ATMA1

IPG20N06S4L11ATMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 8TDSON

Specifications

  • Series
    Automotive, AEC-Q101, OptiMOS™
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    60V
  • Current - Continuous Drain (Id) @ 25°C
    20A
  • Rds On (Max) @ Id, Vgs
    11.2mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 28µA
  • Gate Charge (Qg) (Max) @ Vgs
    53nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    4020pF @ 25V
  • Power - Max
    65W
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerVDFN
  • Supplier Device Package
    PG-TDSON-8-4

IPG20N06S4L11ATMA1 Request a Quote

In Stock 15815
Quantity:
Unit Price (Reference Price):
2.01000
Target price:
Total:2.01000

Datasheet