IPG20N10S4L35AATMA1

IPG20N10S4L35AATMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 100V 20A 8TDSON

Specifications

  • Series
    Automotive, AEC-Q101, OptiMOS™
  • Package
    Tape & Reel (TR)
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    100V
  • Current - Continuous Drain (Id) @ 25°C
    20A
  • Rds On (Max) @ Id, Vgs
    35mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id
    2.1V @ 16µA
  • Gate Charge (Qg) (Max) @ Vgs
    17.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    1105pF @ 25V
  • Power - Max
    43W
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount, Wettable Flank
  • Package / Case
    8-PowerVDFN
  • Supplier Device Package
    PG-TDSON-8-10

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In Stock 30764
Quantity:
Unit Price (Reference Price):
0.66868
Target price:
Total:0.66868

Datasheet