IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 800V 4.5A SOT223

Specifications

  • Series
    CoolMOS™ P7
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    800 V
  • Current - Continuous Drain (Id) @ 25°C
    4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    1.2Ohm @ 1.7A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs
    11 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    300 pF @ 500 V
  • FET Feature
    -
  • Power Dissipation (Max)
    6.8W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-SOT223
  • Package / Case
    TO-261-3

IPN80R1K2P7ATMA1 Request a Quote

In Stock 19340
Quantity:
Unit Price (Reference Price):
1.08000
Target price:
Total:1.08000

Datasheet