IPP60R180P7XKSA1

IPP60R180P7XKSA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 650V 18A TO220-3

Specifications

  • Series
    CoolMOS™ P7
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    180mOhm @ 5.6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs
    25 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1081 pF @ 400 V
  • FET Feature
    -
  • Power Dissipation (Max)
    72W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    PG-TO220-3
  • Package / Case
    TO-220-3

IPP60R180P7XKSA1 Request a Quote

In Stock 12296
Quantity:
Unit Price (Reference Price):
2.62000
Target price:
Total:2.62000

Datasheet