Specifications

• Series
  CoolMOS™
• Package
  Tube
• Part Status
  Not For New Designs
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  650 V
• Current - Continuous Drain (Id) @ 25°C
  20.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On)
  10V
• Rds On (Max) @ Id, Vgs
  190mOhm @ 7.3A, 10V
• Vgs(th) (Max) @ Id
  3.5V @ 730µA
• Gate Charge (Qg) (Max) @ Vgs
  73 nC @ 10 V
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  1620 pF @ 100 V
• FET Feature
  -
• Power Dissipation (Max)
  151W (Tc)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  PG-TO220-3
• Package / Case
  TO-220-3