IPT60R080G7XTMA1

IPT60R080G7XTMA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 650V 29A 8HSOF

Specifications

  • Series
    CoolMOS™ G7
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    80mOhm @ 9.7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 490µA
  • Gate Charge (Qg) (Max) @ Vgs
    42 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    1640 pF @ 400 V
  • FET Feature
    -
  • Power Dissipation (Max)
    167W (Tc)
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    PG-HSOF-8-2
  • Package / Case
    8-PowerSFN

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In Stock 8153
Quantity:
Unit Price (Reference Price):
6.86000
Target price:
Total:6.86000

Datasheet