IPW65R110CFDAFKSA1

IPW65R110CFDAFKSA1

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 650V 31.2A TO247-3

Specifications

  • Series
    Automotive, AEC-Q101, CoolMOS™
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    31.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    110mOhm @ 12.7A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 1.3mA
  • Gate Charge (Qg) (Max) @ Vgs
    118 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    3240 pF @ 100 V
  • FET Feature
    -
  • Power Dissipation (Max)
    277.8W (Tc)
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    PG-TO247-3
  • Package / Case
    TO-247-3

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In Stock 7271
Quantity:
Unit Price (Reference Price):
7.93000
Target price:
Total:7.93000

Datasheet