IRL6372TRPBF

IRL6372TRPBF

Manufacturer

IR (Infineon Technologies)

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 2N-CH 30V 8.1A 8SOIC

Specifications

  • Series
    HEXFET®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    2 N-Channel (Dual)
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V
  • Current - Continuous Drain (Id) @ 25°C
    8.1A
  • Rds On (Max) @ Id, Vgs
    17.9mOhm @ 8.1A, 4.5V
  • Vgs(th) (Max) @ Id
    1.1V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs
    11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds
    1020pF @ 25V
  • Power - Max
    2W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package
    8-SO

IRL6372TRPBF Request a Quote

In Stock 22823
Quantity:
Unit Price (Reference Price):
0.91000
Target price:
Total:0.91000

Datasheet