Specifications

• Series
  BIMOSFET™
• Package
  Tube
• Part Status
  Active
• IGBT Type
  NPT
• Voltage - Collector Emitter Breakdown (Max)
  3000 V
• Current - Collector (Ic) (Max)
  38 A
• Current - Collector Pulsed (Icm)
  120 A
• Vce(on) (Max) @ Vge, Ic
  2.7V @ 15V, 14A
• Power - Max
  200 W
• Switching Energy
  -
• Input Type
  Standard
• Gate Charge
  62 nC
• Td (on/off) @ 25°C
  40ns/166ns
• Test Condition
  960V, 14A, 20Ohm, 15V
• Reverse Recovery Time (trr)
  1.4 µs
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Surface Mount
• Package / Case
  TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package
  TO-263