APTM120H140FT1G

APTM120H140FT1G

Manufacturer

Roving Networks / Microchip Technology

Product Category

Transistors - FETs, MOSFETs - Arrays

Description

MOSFET 4N-CH 1200V 8A SP1

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • FET Type
    4 N-Channel (H-Bridge)
  • FET Feature
    Standard
  • Drain to Source Voltage (Vdss)
    1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C
    8A
  • Rds On (Max) @ Id, Vgs
    1.68Ohm @ 7A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs
    145nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds
    3812pF @ 25V
  • Power - Max
    208W
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Mounting Type
    Chassis Mount
  • Package / Case
    SP1
  • Supplier Device Package
    SP1

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In Stock 1760
Quantity:
Unit Price (Reference Price):
57.21000
Target price:
Total:57.21000

Datasheet