Specifications

• Series
  -
• Package
  Bulk
• Part Status
  Active
• FET Type
  P-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  40 V
• Current - Continuous Drain (Id) @ 25°C
  430mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On)
  5V, 10V
• Rds On (Max) @ Id, Vgs
  2Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id
  2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs
  -
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  150 pF @ 20 V
• FET Feature
  -
• Power Dissipation (Max)
  740mW (Ta)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-92-3
• Package / Case
  TO-226-3, TO-92-3 (TO-226AA)