APTGT100A120D1G

APTGT100A120D1G

Manufacturer

Microsemi

Product Category

Transistors - IGBTs - Modules

Description

IGBT MODULE 1200V 150A 520W D1

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • IGBT Type
    Trench Field Stop
  • Configuration
    Half Bridge
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    150 A
  • Power - Max
    520 W
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 100A
  • Current - Collector Cutoff (Max)
    3 mA
  • Input Capacitance (Cies) @ Vce
    7 nF @ 25 V
  • Input
    Standard
  • NTC Thermistor
    No
  • Operating Temperature
    -
  • Mounting Type
    Chassis Mount
  • Package / Case
    D1
  • Supplier Device Package
    D1

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Datasheet