MRF581G

MRF581G

Manufacturer

Microsemi

Product Category

Transistors - Bipolar (BJT) - RF

Description

RF TRANS NPN 18V 5GHZ MICRO X

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Obsolete
  • Transistor Type
    NPN
  • Voltage - Collector Emitter Breakdown (Max)
    18V
  • Frequency - Transition
    5GHz
  • Noise Figure (dB Typ @ f)
    3dB ~ 3.5dB @ 500MHz
  • Gain
    13dB ~ 15.5dB
  • Power - Max
    1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    50 @ 50mA, 5V
  • Current - Collector (Ic) (Max)
    200mA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    Micro-X ceramic (84C)
  • Supplier Device Package
    Micro-X ceramic (84C)

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Datasheet