MMBT2222A

MMBT2222A

Manufacturer

NTE Electronics, Inc.

Product Category

Transistors - Bipolar (BJT) - Single

Description

T-NPN SI- GEN PUR AMP

Specifications

  • Series
    -
  • Package
    Bag
  • Part Status
    Active
  • Transistor Type
    NPN
  • Current - Collector (Ic) (Max)
    1 A
  • Voltage - Collector Emitter Breakdown (Max)
    40 V
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 50mA, 500mA
  • Current - Collector Cutoff (Max)
    10nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 150mA, 10V
  • Power - Max
    350 mW
  • Frequency - Transition
    300MHz
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package
    SOT-23-3

MMBT2222A Request a Quote

In Stock 86245
Quantity:
Unit Price (Reference Price):
0.11720
Target price:
Total:0.11720

Datasheet