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NTE2018
Manufacturer
Product Category
Transistors - Bipolar (BJT) - Arrays
Description
IC-8 CHAN CMOS/TTL DR 18-PIN DIP
RFQ Email: [email protected] or Inquires online
Specifications
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Series-
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PackageBag
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Part StatusActive
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Transistor Type8 NPN Darlington
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Current - Collector (Ic) (Max)600mA
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Voltage - Collector Emitter Breakdown (Max)50V
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Vce Saturation (Max) @ Ib, Ic1.6V @ 350mA, 500A
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Current - Collector Cutoff (Max)-
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DC Current Gain (hFE) (Min) @ Ic, Vce-
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Power - Max1W
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Frequency - Transition-
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Operating Temperature-20°C ~ 85°C (TA)
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Mounting TypeThrough Hole
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Package / Case18-DIP (0.300", 7.62mm)
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Supplier Device Package18-PDIP
