A2G35S200-01SR3

A2G35S200-01SR3

Manufacturer

NXP Semiconductors

Product Category

Transistors - FETs, MOSFETs - RF

Description

AIRFAST RF POWER GAN TRANSISTOR

Specifications

  • Series
    -
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • Transistor Type
    GaN HEMT
  • Frequency
    3.4GHz ~ 3.6GHz
  • Gain
    16.1dB
  • Voltage - Test
    48 V
  • Current Rating (Amps)
    -
  • Noise Figure
    -
  • Current - Test
    291 mA
  • Power - Output
    180W
  • Voltage - Rated
    125 V
  • Package / Case
    NI-400S-2S
  • Supplier Device Package
    NI-400S-2S

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In Stock 1107
Quantity:
Unit Price (Reference Price):
264.51000
Target price:
Total:264.51000

Datasheet