Specifications

• Series
  -
• Package
  Cut Tape (CT)Tape & Box (TB)
• Part Status
  Active
• FET Type
  N-Channel
• Technology
  MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss)
  60 V
• Current - Continuous Drain (Id) @ 25°C
  200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On)
  4.5V, 10V
• Rds On (Max) @ Id, Vgs
  5Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id
  3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs
  -
• Vgs (Max)
  ±20V
• Input Capacitance (Ciss) (Max) @ Vds
  50 pF @ 25 V
• FET Feature
  -
• Power Dissipation (Max)
  400mW (Ta)
• Operating Temperature
  -55°C ~ 150°C (TJ)
• Mounting Type
  Through Hole
• Supplier Device Package
  TO-92-3
• Package / Case
  TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)