2SD1801S-E

2SD1801S-E

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - Bipolar (BJT) - Single

Description

TRANS NPN 50V 2A TP

Specifications

  • Series
    -
  • Package
    Bulk
  • Part Status
    Active
  • Transistor Type
    NPN
  • Current - Collector (Ic) (Max)
    2 A
  • Voltage - Collector Emitter Breakdown (Max)
    50 V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 50mA, 1A
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    140 @ 100mA, 2V
  • Power - Max
    800 mW
  • Frequency - Transition
    150MHz
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package
    TP

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In Stock 26912
Quantity:
Unit Price (Reference Price):
0.77000
Target price:
Total:0.77000

Datasheet