AFGY100T65SPD

AFGY100T65SPD

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - IGBTs - Single

Description

IGBT - 650 V 100 A FS3 FOR EV TR

RFQ Email: [email protected] or Inquires online

Specifications

  • Series
    Automotive, AEC-Q101
  • Package
    Tube
  • Part Status
    Active
  • IGBT Type
    Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    120 A
  • Current - Collector Pulsed (Icm)
    300 A
  • Vce(on) (Max) @ Vge, Ic
    2.05V @ 15V, 100A
  • Power - Max
    660 W
  • Switching Energy
    5.1mJ (on), 2.7mJ (off)
  • Input Type
    Standard
  • Gate Charge
    109 nC
  • Td (on/off) @ 25°C
    36ns/78ns
  • Test Condition
    400V, 100A, 5Ohm, 15V
  • Reverse Recovery Time (trr)
    105 ns
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3

AFGY100T65SPD Request a Quote

In Stock 6759
Quantity:
Unit Price (Reference Price):
8.63000
Target price:
Total:8.63000