FCPF190N60

FCPF190N60

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 600V 20.2A TO220F

Specifications

  • Series
    SuperFET® II
  • Package
    Tube
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    600 V
  • Current - Continuous Drain (Id) @ 25°C
    20.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    199mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    74 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    2950 pF @ 25 V
  • FET Feature
    -
  • Power Dissipation (Max)
    39W (Tc)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Supplier Device Package
    TO-220F
  • Package / Case
    TO-220-3 Full Pack

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In Stock 10737
Quantity:
Unit Price (Reference Price):
3.06000
Target price:
Total:3.06000

Datasheet