FDC645N

FDC645N

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - FETs, MOSFETs - Single

Description

MOSFET N-CH 30V 5.5A SUPERSOT6

Specifications

  • Series
    PowerTrench®
  • Package
    Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
  • Part Status
    Active
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    30 V
  • Current - Continuous Drain (Id) @ 25°C
    5.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Rds On (Max) @ Id, Vgs
    26mOhm @ 6.2A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    21 nC @ 4.5 V
  • Vgs (Max)
    ±12V
  • Input Capacitance (Ciss) (Max) @ Vds
    1460 pF @ 15 V
  • FET Feature
    -
  • Power Dissipation (Max)
    1.6W (Ta)
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Supplier Device Package
    SuperSOT™-6
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6

FDC645N Request a Quote

In Stock 32108
Quantity:
Unit Price (Reference Price):
0.64000
Target price:
Total:0.64000

Datasheet