FGA50N100BNTD2

FGA50N100BNTD2

Manufacturer

Sanyo Semiconductor/ON Semiconductor

Product Category

Transistors - IGBTs - Single

Description

IGBT 1000V 50A 156W TO3P

Specifications

  • Series
    -
  • Package
    Tube
  • Part Status
    Last Time Buy
  • IGBT Type
    NPT and Trench
  • Voltage - Collector Emitter Breakdown (Max)
    1000 V
  • Current - Collector (Ic) (Max)
    50 A
  • Current - Collector Pulsed (Icm)
    200 A
  • Vce(on) (Max) @ Vge, Ic
    2.9V @ 15V, 60A
  • Power - Max
    156 W
  • Switching Energy
    -
  • Input Type
    Standard
  • Gate Charge
    257 nC
  • Td (on/off) @ 25°C
    34ns/243ns
  • Test Condition
    600V, 60A, 10Ohm, 15V
  • Reverse Recovery Time (trr)
    75 ns
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P

FGA50N100BNTD2 Request a Quote

In Stock 7803
Quantity:
Unit Price (Reference Price):
7.29000
Target price:
Total:7.29000

Datasheet